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| A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features * PNP Transistor * VCEO = -12V * RSAT = 65m * IC = -4A Schottky Diode * VR = 40V * VF = 500mv (@1A) * IC = 1A IC = -4A Continuous Collector Current Low Saturation Voltage (-140mV @ 1A) hFE characterized up to -10A Low VF, fast switching Schottky Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1) "Green" Devices (Note 2) Mechanical Data * * * * * * * Case: DFN3020B-8 Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) * * * * * * * Applications * * * * DC - DC Converters Charging circuits Mobile phones Motor control DFN3020B-8 Top View Device symbol Pin Configuration Ordering Information Product ZXTPS717MCTA Notes: Status Active Package DFN3020B-8 Marking 1S1 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc's "Green" Policy can be found on our website https://www.diodes.com Marking Information 1S1 = Product type Marking Code Dot Denotes Pin 1 ZXTPS717MC Document Number DS31936 Rev. 2 - 2 1 of 10 www.diodes.com January 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS717MC Maximum Ratings, Transistor Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Notes a and f) Continuous Collector Current (Notes b and f) Base Current Symbol VCBO VCEO VEBO ICM IC IC IB Limit -20 -12 -7.5 -12 -4 -4.4 1 Unit V V V A A A A Thermal Characteristics, Transistor Characteristic Power Dissipation at TA = 25C (Notes a and f) Linear Derating Factor Power Dissipation at TA = 25C (Notes b and f) Linear Derating Factor Power Dissipation at TA = 25C (Notes c and f) Linear Derating Factor Power Dissipation at TA = 25C (Notes d and f) Linear Derating Factor Power Dissipation at TA = 25C (Notes d and g) Linear Derating Factor Power Dissipation at TA = 25C (Notes e and g) Linear Derating Factor Junction to Ambient (Notes a and f) Junction to Ambient (Notes b and f) Junction to Ambient (Notes c and f) Junction to Ambient (Notes d and f) Junction to Ambient (Notes d and g) Junction to Ambient (Notes e and g) Junction Temperature Operating and Storage Temperature Range Notes: Symbol PD PD PD PD PD PD RJA RJA RJA RJA RJA RJA TJ TSTG Value 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 83 51 125 111 73.5 41.7 150 -55 to +150 Unit W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C/W C/W C/W C/W C/W C/W C C a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only. d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. For a dual device with one active die. g. For dual device with 2 active die running at equal power. ZXTPS717MC Document Number DS31936 Rev. 2 - 2 2 of 10 www.diodes.com January 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS717MC Thermal Characteristics and Derating information, Transistor ZXTPS717MC Document Number DS31936 Rev. 2 - 2 3 of 10 www.diodes.com January 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS717MC Maximum Ratings, Schottky Diode Parameter Continuous Reverse Voltage Forward Voltage @ IF = 1000mA (typ) Forward Current Average Peak Forward Current D=50% Non Repetitive Forward Current t 100s t 10ms Symbol VR VF IF IFAV IFSM Limit 40 425 1850 3 12 7 Unit V mV mA A A A Thermal Characteristics, Schottky Diode Characteristic Power Dissipation at TA = 25C (Notes a and f) Linear Derating Factor Power Dissipation at TA = 25C (Notes b and f) Linear Derating Factor Power Dissipation at TA = 25C (Notes c and f) Linear Derating Factor Power Dissipation at TA = 25C (Notes d and f) Linear Derating Factor Power Dissipation at TA = 25C (Notes d and g) Linear Derating Factor Power Dissipation at TA = 25C (Notes e and g) Linear Derating Factor Junction to Ambient (Notes a and f) Junction to Ambient (Notes b and f) Junction to Ambient (Notes c and f) Junction to Ambient (Notes d and f) Junction to Ambient (Notes d and g) Junction to Ambient (Notes e and g) Junction Temperature Operating and Storage Temperature Range Notes: Symbol PD PD PD PD PD PD RJA RJA RJA RJA RJA RJA TJ TSTG Value 1.2 12 2 20 0.8 8 0.9 9 1.36 13.6 2.4 24 83 51 125 111 73.5 41.7 125 -55 to +150 Unit W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C/W C/W C/W C/W C/W C/W C C a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only. d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. For a dual device with one active die. g. For dual device with 2 active die running at equal power. ZXTPS717MC Document Number DS31936 Rev. 2 - 2 4 of 10 www.diodes.com January 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS717MC Thermal Characteristics and Derating information, Schottky Diode ZXTPS717MC Document Number DS31936 Rev. 2 - 2 5 of 10 www.diodes.com January 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS717MC Electrical Characteristics, Transistor @TA = 25C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Static Forward Current Transfer Ratio (Note 3) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES Min -20 -12 -7.5 300 300 180 60 45 100 Typ -35 -25 -8.5 475 450 275 100 70 -10 -100 -100 -195 -240 -0.87 -0.97 21 110 70 130 Max -25 -25 -25 -17 -140 -150 -300 -300 -0.95 -1.05 30 Unit V V V nA nA nA Test Condition IC = -100A IC = -10mA IE = -100A VCB = -16V VEB = -6V VCES = -10V IC = -10mA, VCE = -2V IC = -100mA, VCE = -2V IC = -2.5A, VCE = -2V IC = -8A, VCE = -2V IC = -10A, VCE = -2V IC = -0.1A, IB = -10mA IC = -1A, IB = -10mA IC = -1.5A, IB = -50mA IC = -3A, IB = -50mA IC = -4A, IB= -150mA IC = -4A, VCE = -2V IC= -4A, IB = -150mA VCB = -10V, f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz VCC = -6V, IC = -2A IB1 = IB2 = -50mA hFE - Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Turn-On Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Output Capacitance Transition Frequency Turn-on Time Turn-off Time VCE(sat) mV VBE(on) VBE(sat) Cobo fT ton toff V V pF MHz ns ns Electrical Characteristics, Schottky Diode @TA = 25C unless otherwise specified Characteristic Reverse Breakdown Voltage Symbol V(BR)R Min 40 Typ 60 240 265 305 355 390 425 495 420 50 25 12 Max 270 290 340 400 450 500 600 100 Unit V Test Condition IR = -300A IF = 50mA IF = 100mA IF = 250mA IF = 500mA IF = 750mA IF = 1000mA IF = 1500mA IF = 1000mA, TA = 100C VR = 30V VR = 25V, f = 1MHz switched from IF = 500mA to IR = 500mA Measured at IR = 50mA Forward Voltage (Note 3) VF mV Reverse Current Diode Capacitance Reverse Recovery Time Notes: 3 . Measured under pulsed conditions. IR CD trr A pF ns ZXTPS717MC Document Number DS31936 Rev. 2 - 2 6 of 10 www.diodes.com January 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS717MC Typical Characteristics, Transistor ZXTPS717MC Document Number DS31936 Rev. 2 - 2 7 of 10 www.diodes.com January 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS717MC Typical Characteristics, Schottky Diode ZXTPS717MC Document Number DS31936 Rev. 2 - 2 8 of 10 www.diodes.com January 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS717MC Package Outline Dimensions DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A A1 D A3 D4 E Z L b D2 D4 E2 e Suggested Pad Layout C X Y1 G Y2 G1 Y X1 Dimensions C G G1 X X1 Y Y1 Y2 Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 ZXTPS717MC Document Number DS31936 Rev. 2 - 2 9 of 10 www.diodes.com January 2010 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS717MC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. 2. B. are intended to implant into the body, or support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com ZXTPS717MC Document Number DS31936 Rev. 2 - 2 10 of 10 www.diodes.com January 2010 (c) Diodes Incorporated |
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